Technical Details

• Part Status Last Time Buy
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 250 V
• Current - Continuous Drain (Id) @ 25°C 65A
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Rds On (Max) @ Id, Vgs 35mOhm @ 32.5A, 10V
• Vgs(th) (Max) @ Id 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
• Vgs (Max) ±30V
• Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 150W
• Operating Temperature 150°C
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package TO-3P
• Package / Case TO-3P-3, SC-65-3