Technical Details

• Part Status Last Time Buy
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 60 V
• Current - Continuous Drain (Id) @ 25°C 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Rds On (Max) @ Id, Vgs 400mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id 2V @ 1mA
• Vgs (Max) ±20V
• FET Feature -
• Power Dissipation (Max) 20W (Ta)
• Operating Temperature 150°C
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package DPAK-3
• Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63