Technical Details

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual)
• FET Feature -
• Drain to Source Voltage (Vdss) 150V
• Current - Continuous Drain (Id) @ 25°C 6A (Ta), 18.5A (Tc)
• Rds On (Max) @ Id, Vgs 62mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 75V
• Power - Max 3W (Ta), 26W (Tc)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case 8-PowerTDFN
• Supplier Device Package 8-HSOP