Technical Details

• Part Status Active
• Transistor Type 1 NPN, 1 PNP
• Current - Collector (Ic) (Max) 100mA
• Voltage - Collector Emitter Breakdown (Max) 45V
• Vce Saturation (Max) @ Ib, Ic 100mV @ 500µA, 10mA
• Current - Collector Cutoff (Max) 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
• Power - Max 350mW
• Frequency - Transition 100MHz
• Operating Temperature 150°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Package / Case 6-XFDFN Exposed Pad
• Supplier Device Package DFN1010B-6