Technical Details

• Part Status Active
• FET Type N-Channel
• Voltage - Breakdown (V(BR)GSS) 40 V
• Drain to Source Voltage (Vdss) 40 V
• Current - Drain (Idss) @ Vds (Vgs=0) 30 mA @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds 16pF @ 20V
• Resistance - RDS(On) 30 Ohms
• Power - Max 360 mW
• Operating Temperature -65°C ~ 175°C (TJ)
• Mounting Type Surface Mount
• Package / Case 3-SMD, No Lead
• Supplier Device Package UB