技术参数

• Part Status Obsolete
• Sensing Distance 0.205" (5.2mm)
• Sensing Method Through-Beam
• Output Configuration Phototransistor
• Current - DC Forward (If) (Max) 60 mA
• Current - Collector (Ic) (Max) 50 mA
• Voltage - Collector Emitter Breakdown (Max) 30 V
• Response Time 13µs, 17µs
• Operating Temperature -40°C ~ 85°C
• Mounting Type Surface Mount
• Package / Case Module, Slotted
• Type Unamplified
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.49.8000