技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel, Common Drain, Common Source
• FET Feature -
• Drain to Source Voltage (Vdss) 80V
• Current - Continuous Drain (Id) @ 25°C 300A (Tj)
• Rds On (Max) @ Id, Vgs 1.15mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id 3.3V @ 275µA
• Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 15340pF @ 40V
• Power - Max 375W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Package / Case 8-PowerSFN
• Supplier Device Package PG-HSOF-8-2
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.29.0095