技术参数

• Part Status Active
• Technology Silicon Carbide (SiC)
• Configuration 2 N-Channel (Half Bridge)
• FET Feature -
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 83A (Tc)
• Vgs(th) (Max) @ Id 5.1V @ 8.6mA
• Power - Max 410W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 2 (1 Year)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095