技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual)
• FET Feature -
• Drain to Source Voltage (Vdss) 40V
• Current - Continuous Drain (Id) @ 25°C 8A (Ta), 15A (Tc)
• Rds On (Max) @ Id, Vgs 17.2mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 10.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 530pF @ 20V
• Power - Max 2W (Ta), 14W (Tc)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case 8-PowerVDFN
• Supplier Device Package 8-HSMT (3.2x3)
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.29.0095