技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration N and P-Channel
• FET Feature -
• Drain to Source Voltage (Vdss) 40V
• Current - Continuous Drain (Id) @ 25°C 7.2A (Ta), 9.6A (Tc), 6.6A (Ta), 8.8A (Tc)
• Rds On (Max) @ Id, Vgs 17mOhm @ 9.6A, 10V, 23mOhm @ 8.8A, 10V
• Vgs(th) (Max) @ Id 2.7V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 19.5nC @ 10V, 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 20V, 2500pF @ 20V
• Power - Max 1.4W (Ta), 2.5W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package PG-DSO-8-920
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095