技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual)
• FET Feature -
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 12A (Tc)
• Rds On (Max) @ Id, Vgs 90mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 135pF @ 30V
• Power - Max 3W (Ta), 20W (Tc)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case 8-PowerTDFN
• Supplier Device Package 8-HSOP
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095