技术参数

• Part Status Active
• Technology SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max) 1200 V
• Current - Average Rectified (Io) 20A
• Voltage - Forward (Vf) (Max) @ If 1.6 V @ 20 A
• Speed No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr) 0 ns
• Current - Reverse Leakage @ Vr 400 µA @ 1.2 kV
• Capacitance @ Vr, F 1050pF @ 1V, 1MHz
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package TO-263L
• Operating Temperature - Junction 175°C
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.10.0080