技术参数

• Part Status Last Time Buy
• Technology MOSFET (Metal Oxide)
• Configuration N and P-Channel
• FET Feature -
• Drain to Source Voltage (Vdss) 200V
• Current - Continuous Drain (Id) @ 25°C 500mA (Ta), 250mA (Ta)
• Rds On (Max) @ Id, Vgs 2.2Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs -
• Input Capacitance (Ciss) (Max) @ Vds 120pF @ 10V, 140pF @ 10V
• Power - Max 2W (Ta)
• Operating Temperature 150°C
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package 8-SOP
• RoHS Status ROHS3 Compliant