技术参数

• Part Status Obsolete
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 8V
• Frequency - Transition 1.9GHz
• Noise Figure (dB Typ @ f) -
• Gain 7dB
• Power - Max 400mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 50mA, 5V
• Current - Collector (Ic) (Max) 250mA
• Operating Temperature 175°C (TJ)
• Mounting Type Surface Mount
• Package / Case TO-253-4, TO-253AA
• Supplier Device Package SOT-143B
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0075