技术参数

• Part Status Obsolete
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 4.7V
• Frequency - Transition 45GHz
• Noise Figure (dB Typ @ f) 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
• Gain 10dB ~ 29dB
• Power - Max 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 15mA, 3V
• Current - Collector (Ic) (Max) 30mA
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 4-SMD, Flat Leads
• Supplier Device Package 4-TSFP
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0075