技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration N and P-Channel
• FET Feature -
• Drain to Source Voltage (Vdss) 80V
• Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 9A (Tc), 3A (Ta), 8.5A (Tc)
• Rds On (Max) @ Id, Vgs 112mOhm @ 3.5A, 10V, 165mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 10V, 17.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 90pF @ 40V, 720pF @ 40V
• Power - Max 2W (Ta), 13W (Tc)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case 8-PowerVDFN
• Supplier Device Package 8-HSMT (3.2x3)
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095