技术参数

• Part Status Active
• Technology Silicon Carbide (SiC)
• Configuration 2 N-Channel (Half Bridge)
• FET Feature -
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 190A
• Rds On (Max) @ Id, Vgs 5.56mOhm @ 190A, 18V
• Vgs(th) (Max) @ Id 4.55V @ 60mA
• Gate Charge (Qg) (Max) @ Vgs 420nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds 10100pF @ 850V
• Power - Max 20mW
• Operating Temperature -40°C ~ 175°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Through Hole
• Package / Case 11-PowerDIP Module (2.091", 53.10mm)
• Supplier Device Package PG-MDIP-11-1
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected
• HTSUS 8542.39.0060