技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 40 V
• Current - Continuous Drain (Id) @ 25°C 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 17.4mOhm @ 12A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 432µA
• Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 20 V
• FET Feature -
• Power Dissipation (Max) 40W (Tc)
• Operating Temperature 150°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Supplier Device Package 8-HSMT (3.2x3)
• Package / Case 8-PowerVDFN
• Moisture Sensitivity Level (MSL) 1 (Unlimited)