技术参数

• Part Status Obsolete
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual)
• FET Feature Logic Level Gate
• Drain to Source Voltage (Vdss) 50V
• Current - Continuous Drain (Id) @ 25°C 100mA
• Rds On (Max) @ Id, Vgs 20Ohm @ 10mA, 4V
• Vgs(th) (Max) @ Id -
• Gate Charge (Qg) (Max) @ Vgs -
• Input Capacitance (Ciss) (Max) @ Vds 6pF @ 3V
• Power - Max 200mW
• Mounting Type Surface Mount
• Package / Case 6-TSSOP, SC-88, SOT-363
• Supplier Device Package 6-SuperMiniMold
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Affected
• ECCN EAR99
• HTSUS 8541.21.0095