技术参数

• Part Status Last Time Buy
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 3V
• Frequency - Transition 53GHz
• Noise Figure (dB Typ @ f) 0.75dB @ 6GHz
• Gain 15.8dB
• Power - Max 160mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 205 @ 2mA, 3V
• Current - Collector (Ic) (Max) 30mA
• Operating Temperature -
• Mounting Type Surface Mount
• Package / Case 3-XFDFN
• Supplier Device Package DFN1006C-3
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095