技术参数

• Part Status Obsolete
• Technology SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max) 600 V
• Current - Average Rectified (Io) 6A
• Voltage - Forward (Vf) (Max) @ If 1.7 V @ 6 A
• Speed No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr) 0 ns
• Current - Reverse Leakage @ Vr 200 µA @ 600 V
• Capacitance @ Vr, F 300pF @ 0V, 1MHz
• Mounting Type Through Hole
• Package / Case TO-220-3
• Supplier Device Package PG-TO220-3-1
• Operating Temperature - Junction -55°C ~ 175°C
• RoHS Status RoHS non-compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.10.0080