技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N and 2 P-Channel (Full Bridge)
• FET Feature Logic Level Gate, 4V Drive
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 3.5A
• Rds On (Max) @ Id, Vgs 65mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id -
• Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 290pF @ 10V
• Power - Max 2.2W
• Operating Temperature -
• Mounting Type Surface Mount
• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package 8-SOP
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Affected
• ECCN EAR99
• HTSUS 8541.29.0095