技术参数

• Part Status Obsolete
• Transistor Type 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (Max) 15V
• Frequency - Transition 1.4GHz
• Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 800MHz
• Gain -
• Power - Max 280mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 1V
• Current - Collector (Ic) (Max) 25mA
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 6-VSSOP, SC-88, SOT-363
• Supplier Device Package PG-SOT363-PO
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0075