技术参数

• Part Status Obsolete
• FET Type N-Channel
• Voltage - Breakdown (V(BR)GSS) 1200 V
• Drain to Source Voltage (Vdss) 1200 V
• Current - Drain (Idss) @ Vds (Vgs=0) 3.3 µA @ 1200 V
• Current Drain (Id) - Max 35 A
• Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 19.5V (VGS)
• Resistance - RDS(On) 70 mOhms
• Power - Max 238 W
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Package / Case TO-247-3
• Supplier Device Package PG-TO247-3
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095