技术参数

• Part Status Obsolete
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual)
• FET Feature -
• Drain to Source Voltage (Vdss) -
• Current - Continuous Drain (Id) @ 25°C -
• Rds On (Max) @ Id, Vgs -
• Vgs(th) (Max) @ Id 1.4V @ 310µA
• Gate Charge (Qg) (Max) @ Vgs 9nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds 910pF @ 10V
• Power - Max 1.5W (Ta)
• Operating Temperature 150°C
• Mounting Type Surface Mount
• Package / Case 4-XFLGA, CSP
• Supplier Device Package ULGA004-W-1313-RA
• RoHS Status RoHS Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.29.0095