技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration N and P-Channel
• FET Feature -
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 3A (Ta), 2.5A (Ta)
• Rds On (Max) @ Id, Vgs 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 5V, 12.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds 610pF @ 10V, 1550pF @ 25V
• Power - Max 2W
• Operating Temperature 150°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package 8-SOP
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095