技术参数

• Part Status Active
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 6 V
• Current - Continuous Drain (Id) @ 25°C 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
• Rds On (Max) @ Id, Vgs 84mOhm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id 1.2V @ 250µA
• Vgs (Max) -6V
• FET Feature -
• Power Dissipation (Max) 270mW (Ta)
• Operating Temperature -40°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package SC-70-6
• Package / Case 6-TSSOP, SC-88, SOT-363
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095