技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual) Asymmetrical
• FET Feature -
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc)
• Rds On (Max) @ Id, Vgs 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V, 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 590pF @ 15V, 2410pF @ 15V
• Power - Max 3W (Ta)
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 8-PowerTDFN
• Supplier Device Package 8-HSOP
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095