技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration N and P-Channel
• FET Feature -
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 3A (Ta), 2A (Ta)
• Rds On (Max) @ Id, Vgs 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA, 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 4nC @ 5V, 7.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds 270pF @ 10V, 750pF @ 10V
• Power - Max 1.1W (Ta)
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 8-SMD, Flat Leads
• Supplier Device Package TSMT8
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095