技术参数

• Part Status Active
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 12V
• Frequency - Transition 8GHz
• Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
• Gain 17.5dB ~ 21dB
• Power - Max 175mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 70mA, 8V
• Current - Collector (Ic) (Max) 20mA
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case TO-253-4, TO-253AA
• Supplier Device Package PG-SOT-143-3D
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0075