技术参数

• Part Status Obsolete
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 12V
• Frequency - Transition 8GHz
• Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
• Gain 18.5dB
• Power - Max 175mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 8V
• Current - Collector (Ic) (Max) 20mA
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case TO-236-3, SC-59, SOT-23-3
• Supplier Device Package PG-SOT23
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0075