技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual)
• FET Feature Logic Level Gate
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 20A (Tc)
• Rds On (Max) @ Id, Vgs 11.2mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id 2.2V @ 28µA
• Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 4020pF @ 25V
• Power - Max 65W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount, Wettable Flank
• Package / Case 8-PowerVDFN
• Supplier Device Package PG-TDSON-8-10
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095