技术参数

• Part Status Obsolete
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Half Bridge)
• FET Feature Logic Level Gate, 4.5V Drive
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 15A, 30A
• Rds On (Max) @ Id, Vgs 9.4mOhm @ 7.5A, 10V
• Vgs(th) (Max) @ Id -
• Gate Charge (Qg) (Max) @ Vgs 7.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 10V
• Power - Max 10W, 20W
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 8-WFDFN Exposed Pad
• Supplier Device Package 8-WPAK
• RoHS Status ROHS3 Compliant
• ECCN EAR99
• HTSUS 8541.29.0095