技术参数

• Part Status Active
• Technology Silicon Carbide (SiC)
• Configuration 2 N-Channel (Half Bridge)
• FET Feature -
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 204A (Tc)
• Rds On (Max) @ Id, Vgs -
• Vgs(th) (Max) @ Id 4V @ 35.2mA
• Gate Charge (Qg) (Max) @ Vgs -
• Input Capacitance (Ciss) (Max) @ Vds 18000pF @ 10V
• Power - Max 1360W (Tc)
• Operating Temperature -40°C ~ 150°C (TJ)
• Mounting Type Chassis Mount
• Package / Case Module
• Supplier Device Package Module
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095