技术参数

• Part Status Active
• Diode Configuration 1 Pair Common Cathode
• Technology SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max) 1200 V
• Current - Average Rectified (Io) (per Diode) 150A
• Voltage - Forward (Vf) (Max) @ If 1.8 V @ 150 A
• Speed No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr) 0 ns
• Current - Reverse Leakage @ Vr 600 µA @ 1200 V
• Operating Temperature - Junction -40°C ~ 175°C
• Mounting Type Chassis Mount
• Package / Case Module
• Supplier Device Package D1P
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.10.0080