技术参数

• Part Status Active
• Technology Silicon Carbide (SiC)
• Configuration 2 N-Channel (Dual)
• FET Feature -
• Drain to Source Voltage (Vdss) 700V
• Current - Continuous Drain (Id) @ 25°C 689A (Tc)
• Rds On (Max) @ Id, Vgs 3.2mOhm @ 240A, 20V
• Vgs(th) (Max) @ Id 2.4V @ 24mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs 1290nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds 27000pF @ 700V
• Power - Max 1882W (Tc)
• Operating Temperature -
• Mounting Type Chassis Mount
• Package / Case Module
• Supplier Device Package SP6C LI
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095