技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Half Bridge)
• FET Feature Logic Level Gate
• Drain to Source Voltage (Vdss) 25V
• Current - Continuous Drain (Id) @ 25°C 20A, 50A
• Rds On (Max) @ Id, Vgs 7mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id -
• Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 10V
• Power - Max 15W, 35W
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 8-PowerVDFN
• Supplier Device Package 8-WPAK-D
• RoHS Status Not applicable
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• ECCN EAR99
• HTSUS 0000.00.0000