技术参数

• Part Status Obsolete
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual)
• FET Feature -
• Drain to Source Voltage (Vdss) 200V
• Current - Continuous Drain (Id) @ 25°C 9.1A (Tc)
• Rds On (Max) @ Id, Vgs 100mOhm @ 5.5A, 10V
• Vgs(th) (Max) @ Id 4.9V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 25V
• Power - Max 21W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Mounting Type Through Hole
• Package / Case TO-220-5 Full Pack, Formed Leads
• Supplier Device Package TO-220-5 Full-Pak
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095