技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Half Bridge)
• FET Feature -
• Drain to Source Voltage (Vdss) 40V
• Current - Continuous Drain (Id) @ 25°C 60A (Tj)
• Rds On (Max) @ Id, Vgs 5mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id 3V @ 13µA
• Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 1027pF @ 25V
• Power - Max 52W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Package / Case 8-PowerVDFN
• Supplier Device Package PG-TDSON-8-57
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095