技术参数

• Part Status Active
• Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max) 100mA
• Voltage - Collector Emitter Breakdown (Max) 50V
• Resistor - Base (R1) 4.7kOhms
• Resistor - Emitter Base (R2) 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 5mA
• Current - Collector Cutoff (Max) 500nA
• Frequency - Transition 250MHz
• Power - Max 150mW
• Mounting Type Surface Mount
• Package / Case SOT-563, SOT-666
• Supplier Device Package EMT6
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0075