技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 500 V
• Current - Continuous Drain (Id) @ 25°C 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Rds On (Max) @ Id, Vgs 100mOhm @ 28A, 10V
• Vgs(th) (Max) @ Id 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V
• Vgs (Max) ±30V
• Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 357W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Chassis Mount
• Supplier Device Package ISOTOP®
• Package / Case SOT-227-4, miniBLOC
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095