技术参数

• Part Status Active
• FET Type P-Channel
• Voltage - Breakdown (V(BR)GSS) 30 V
• Drain to Source Voltage (Vdss) 30 V
• Current - Drain (Idss) @ Vds (Vgs=0) 5 mA @ 15 V
• Voltage - Cutoff (VGS off) @ Id 1 V @ 1 nA
• Input Capacitance (Ciss) (Max) @ Vds 27pF @ 15V
• Resistance - RDS(On) 175 Ohms
• Power - Max 500 mW
• Operating Temperature -65°C ~ 200°C (TJ)
• Mounting Type Surface Mount
• Package / Case 4-SMD, No Lead
• Supplier Device Package UA
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095