技术参数

• Part Status Active
• FET Type N-Channel
• Voltage - Breakdown (V(BR)GSS) 30 V
• Drain to Source Voltage (Vdss) 30 V
• Current - Drain (Idss) @ Vds (Vgs=0) 50 mA @ 15 V
• Voltage - Cutoff (VGS off) @ Id 4 V @ 500 pA
• Input Capacitance (Ciss) (Max) @ Vds 18pF @ 10V
• Resistance - RDS(On) 25 Ohms
• Power - Max 360 mW
• Operating Temperature -65°C ~ 200°C (TJ)
• Grade Military
• Qualification MIL-PRF-19500/385
• Mounting Type Surface Mount
• Package / Case 3-SMD, No Lead
• Supplier Device Package UB
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095