技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 4 N-Channel
• FET Feature -
• Drain to Source Voltage (Vdss) 2000V (2kV)
• Current - Continuous Drain (Id) @ 25°C 50A (Tj)
• Rds On (Max) @ Id, Vgs 26.5mOhm @ 60A, 18V
• Vgs(th) (Max) @ Id 5.15V @ 34mA
• Gate Charge (Qg) (Max) @ Vgs 234nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds 7240pF @ 1.2kV
• Power - Max -
• Operating Temperature -40°C ~ 175°C (TJ)
• Mounting Type Chassis Mount
• Package / Case Module
• Supplier Device Package AG-EASY3B
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095