技术参数

• Part Status Active
• Technology Silicon Carbide (SiC)
• Configuration 6 N-Channel (3-Phase Bridge)
• FET Feature -
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 62.5A (Tc)
• Rds On (Max) @ Id, Vgs 11.7mOhm @ 62.5A, 18V
• Vgs(th) (Max) @ Id 5.15V @ 28mA
• Gate Charge (Qg) (Max) @ Vgs 200nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds 6050pF @ 800V
• Operating Temperature -
• Mounting Type -
• Package / Case -
• Supplier Device Package -
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095