技术参数

• Part Status Active
• Technology Silicon Carbide (SiC)
• Configuration 2 N-Channel (Dual)
• FET Feature -
• Drain to Source Voltage (Vdss) 2000V (2kV)
• Current - Continuous Drain (Id) @ 25°C 280A (Tc)
• Rds On (Max) @ Id, Vgs 5.3mOhm @ 300A, 18V
• Vgs(th) (Max) @ Id 5.15V @ 168mA
• Gate Charge (Qg) (Max) @ Vgs 1170nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds 36100pF @ 1.2kV
• Power - Max -
• Operating Temperature -40°C ~ 175°C (TJ)
• Mounting Type Chassis Mount
• Package / Case Module
• Supplier Device Package AG-62MMHB
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095