技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 4 N-Channel (Full Bridge)
• FET Feature -
• Drain to Source Voltage (Vdss) 650V
• Current - Continuous Drain (Id) @ 25°C 35A
• Rds On (Max) @ Id, Vgs 39.4mOhm @ 35A, 10V
• Vgs(th) (Max) @ Id 4.45V @ 1.74mA
• Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 6950pF @ 400V
• Power - Max -
• Operating Temperature -40°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Chassis Mount
• Package / Case Module
• Supplier Device Package Module
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095