技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration -
• FET Feature -
• Drain to Source Voltage (Vdss) 40V
• Current - Continuous Drain (Id) @ 25°C 5A (Ta), 3.5A (Tc)
• Rds On (Max) @ Id, Vgs 48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs -
• Input Capacitance (Ciss) (Max) @ Vds -
• Power - Max 2W (Ta)
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 6-PowerUDFN
• Supplier Device Package HUML2020L8
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.29.0095