技术参数

• Part Status Active
• Technology Silicon Carbide (SiC)
• Configuration 6 N-Channel
• FET Feature Silicon Carbide (SiC)
• Current - Continuous Drain (Id) @ 25°C 30A
• Power - Max 20mW
• Operating Temperature -40°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Chassis Mount
• Package / Case Module
• Supplier Device Package AG-EASY1B
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8542.39.0060