技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration N and P-Channel
• FET Feature -
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 2A (Ta), 1.5A (Ta)
• Rds On (Max) @ Id, Vgs 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 5V, 17nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V, 950pF @ 25V
• Power - Max 1.1W (Ta)
• Operating Temperature -55°C ~ 150°C
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Package / Case 8-SMD, Flat Leads
• Supplier Device Package TSMT8
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.21.0095